Research Article
Article:CMOS Development and Optimization, Scaling Issue and Replacement with High-K Material for Future Microelectronics
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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
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| Volume 8 - Issue 5 |
| Published: October 2010 |
| Authors: Davinder Rathee, Mukesh Kumar, Sandeep K. Arya |
10.5120/1208-1730
|
Davinder Rathee, Mukesh Kumar, Sandeep K. Arya . Article:CMOS Development and Optimization, Scaling Issue and Replacement with High-K Material for Future Microelectronics. International Journal of Computer Applications. 8, 5 (October 2010), 10-17. DOI=10.5120/1208-1730
@article{ 10.5120/1208-1730,
author = { Davinder Rathee,Mukesh Kumar,Sandeep K. Arya },
title = { Article:CMOS Development and Optimization, Scaling Issue and Replacement with High-K Material for Future Microelectronics },
journal = { International Journal of Computer Applications },
year = { 2010 },
volume = { 8 },
number = { 5 },
pages = { 10-17 },
doi = { 10.5120/1208-1730 },
publisher = { Foundation of Computer Science (FCS), NY, USA }
}
%0 Journal Article
%D 2010
%A Davinder Rathee
%A Mukesh Kumar
%A Sandeep K. Arya
%T Article:CMOS Development and Optimization, Scaling Issue and Replacement with High-K Material for Future Microelectronics%T
%J International Journal of Computer Applications
%V 8
%N 5
%P 10-17
%R 10.5120/1208-1730
%I Foundation of Computer Science (FCS), NY, USA
Abstract
The development and optimization of Silicon technology has been guided by CMOS scaling theory [1] and predications made by Semiconductor Industry (SIA) in the International Technology Roadmap for Semiconductor (ITRS). With the trend of scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistors with Moore’s Law [2] requires replacement of conventional silicon dioxide layer with the higher permittivity material for gate dielectric. As the silicon industry moves to 32nm technology node and beyond complaints like leakage and power dissipation dominates. Managing such issues are crucial factors for reliable high speed operation and chip design. Although scaling will continue for couple of decades but device geometries reaches to atomic size and limitation of quantum mechanical physical boundaries. To address these problems there is need of innovation in material science & engineering, device structure, and new nano devices based on different principle of physics. Here we have elaborated about scaling issues and alternate high-k dielectric for Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Introducing a high-k material may replace today’s silicon dioxide technology and can also provide extendibility over several generations. C-V analyses have been studied for various MOS capacitor with conventional SiO2 and also with high-k material like Gd2O3, ZrO2, HfO2, and TiO2.
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