International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
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Volume 71 - Issue 18 |
Published: June 2013 |
Authors: Zared Kamal, Qjidaa Hassan, Zouak Mohcine |
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Zared Kamal, Qjidaa Hassan, Zouak Mohcine . High PSRR Full On-Chip CMOS Low Dropout Voltage Regulator for Wireless Applications. International Journal of Computer Applications. 71, 18 (June 2013), 7-16. DOI=10.5120/12584-9159
@article{ 10.5120/12584-9159, author = { Zared Kamal,Qjidaa Hassan,Zouak Mohcine }, title = { High PSRR Full On-Chip CMOS Low Dropout Voltage Regulator for Wireless Applications }, journal = { International Journal of Computer Applications }, year = { 2013 }, volume = { 71 }, number = { 18 }, pages = { 7-16 }, doi = { 10.5120/12584-9159 }, publisher = { Foundation of Computer Science (FCS), NY, USA } }
%0 Journal Article %D 2013 %A Zared Kamal %A Qjidaa Hassan %A Zouak Mohcine %T High PSRR Full On-Chip CMOS Low Dropout Voltage Regulator for Wireless Applications%T %J International Journal of Computer Applications %V 71 %N 18 %P 7-16 %R 10.5120/12584-9159 %I Foundation of Computer Science (FCS), NY, USA
This paper presents a high PSRR full on-chip and area efficient low dropout voltage regulator (LDO), exploiting the nested miller compensation technique with active capacitor (NMCAC) to eliminate the external capacitor. A novel technique is used to boost the important characteristic for wireless applications regulators PSRR. The idea is applied to stabilize the Low dropout regulator. The proposed regulator LDO works with a supply voltage as low as 1. 8 V and provides a load current of 50 mA with a dropout voltage of 200 mV. It is designed in 0. 18 µm CMOS technology and the active area on chip measures 241×187 µm2. Simulation results show that the PSR of LDO is -60 dB at a frequency of 60 KHz and -41. 7 dB at a frequency of 1 MHz.