Abstract

CNFET is generally considered to be one of the most appealing next generation transistors because of its high current carrying capacity and ballistic transport property. This paper investigates the performance analysis of Dual-X Current Conveyor with the CNFET technology, by varying the CNT diameter at 32nm technology node. Current Bandwidth, Input and Output Port resistances of the device along with the average power dissipated are chosen as the parameters of reference for carrying out the analysis. The impact of scaled power supply voltage, on the parameters of interest has also been explored. HSPICE simulator has been used to carry out the extensive simulations at a reduced power supply of ±0. 9V.

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