Research Article
Investigation of Fast Switched CMOS Inverter using 180nm VLSI Technology
|
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
|
| Volume 51 - Issue 15 |
| Published: August 2012 |
| Authors: Navneet Kaur, Gurpurneet Kaur, Chahat Jain |
10.5120/8117-1740
|
Navneet Kaur, Gurpurneet Kaur, Chahat Jain . Investigation of Fast Switched CMOS Inverter using 180nm VLSI Technology. International Journal of Computer Applications. 51, 15 (August 2012), 14-18. DOI=10.5120/8117-1740
@article{ 10.5120/8117-1740,
author = { Navneet Kaur,Gurpurneet Kaur,Chahat Jain },
title = { Investigation of Fast Switched CMOS Inverter using 180nm VLSI Technology },
journal = { International Journal of Computer Applications },
year = { 2012 },
volume = { 51 },
number = { 15 },
pages = { 14-18 },
doi = { 10.5120/8117-1740 },
publisher = { Foundation of Computer Science (FCS), NY, USA }
}
%0 Journal Article
%D 2012
%A Navneet Kaur
%A Gurpurneet Kaur
%A Chahat Jain
%T Investigation of Fast Switched CMOS Inverter using 180nm VLSI Technology%T
%J International Journal of Computer Applications
%V 51
%N 15
%P 14-18
%R 10.5120/8117-1740
%I Foundation of Computer Science (FCS), NY, USA
Abstract
Inverter is truly the nucleus of electronics industry. It is the main building block of everyday appliances i. e. microwaves, power tools, battery chargers, air conditioners and computers etc. In this paper, CMOS technology has been chosen to study the transient and dc characteristics of an inverter. Feature size is the main parameter to study the voltage transfer characteristics of inverter, for which length and width of transistors is varied. Further, CMOS inverters can be paralleled for increased power to drive higher current loads. Simulations are run on cadence design tool and the schematic diagrams are drawn in virtuoso schematic editor using 180nm technology file.
References
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