Research Article
Three Dimensional Numerical Simulation and Modeling of Small Geometry Fully Depleted SOI MOSFET
|
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
|
| Volume 45 - Issue 11 |
| Published: May 2012 |
| Authors: K. Gowri, C. Karthikeyini, T. Thangam |
10.5120/6824-9284
|
K. Gowri, C. Karthikeyini, T. Thangam . Three Dimensional Numerical Simulation and Modeling of Small Geometry Fully Depleted SOI MOSFET. International Journal of Computer Applications. 45, 11 (May 2012), 19-24. DOI=10.5120/6824-9284
@article{ 10.5120/6824-9284,
author = { K. Gowri,C. Karthikeyini,T. Thangam },
title = { Three Dimensional Numerical Simulation and Modeling of Small Geometry Fully Depleted SOI MOSFET },
journal = { International Journal of Computer Applications },
year = { 2012 },
volume = { 45 },
number = { 11 },
pages = { 19-24 },
doi = { 10.5120/6824-9284 },
publisher = { Foundation of Computer Science (FCS), NY, USA }
}
%0 Journal Article
%D 2012
%A K. Gowri
%A C. Karthikeyini
%A T. Thangam
%T Three Dimensional Numerical Simulation and Modeling of Small Geometry Fully Depleted SOI MOSFET%T
%J International Journal of Computer Applications
%V 45
%N 11
%P 19-24
%R 10.5120/6824-9284
%I Foundation of Computer Science (FCS), NY, USA
Abstract
A threshold voltage model for small geometry fully depleted Silicon-On-Insulator (SOI MOSFET), based on the numerical solution of three dimensional Poisson's equation is presented in this paper. Liebmann's iteration method was used to solve the three dimensional Poisson's equation with necessary boundary conditions. By using the solution of the Poisson's equation potential profile, electric field profile, mobility profile, transfer characteristics and transconductance Vs gate voltage characteristics were calculated and plotted.
References
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