International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
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Volume 149 - Issue 12 |
Published: Sep 2016 |
Authors: Anita Nalawade, Subha Subramaniam |
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Anita Nalawade, Subha Subramaniam . Design Optimization and Performance Analysis of Inverter Circuit using DG-MOSFET at Sub 32nm. International Journal of Computer Applications. 149, 12 (Sep 2016), 5-8. DOI=10.5120/ijca2016911639
@article{ 10.5120/ijca2016911639, author = { Anita Nalawade,Subha Subramaniam }, title = { Design Optimization and Performance Analysis of Inverter Circuit using DG-MOSFET at Sub 32nm }, journal = { International Journal of Computer Applications }, year = { 2016 }, volume = { 149 }, number = { 12 }, pages = { 5-8 }, doi = { 10.5120/ijca2016911639 }, publisher = { Foundation of Computer Science (FCS), NY, USA } }
%0 Journal Article %D 2016 %A Anita Nalawade %A Subha Subramaniam %T Design Optimization and Performance Analysis of Inverter Circuit using DG-MOSFET at Sub 32nm%T %J International Journal of Computer Applications %V 149 %N 12 %P 5-8 %R 10.5120/ijca2016911639 %I Foundation of Computer Science (FCS), NY, USA
In this paper, the design and performance of inverter circuit using Double gate MOSFET at 32nm Sub-micron CMOS technology has presented. The DG-MOSFET has a potential to overcome the problem of SCE. DG-MOSFET has been used for improvement in performance and reducing power dissipation. In this work, the propagation delay and dynamic power dissipation is observed for inverter circuit. Also the analysis of DG-MOSFET has been done using nanohub tool.