Research Article
Characteristics of InxGa1-XN based Light Emitting Diode with InGaN Barriers
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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
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| Volume 147 - Issue 2 |
| Published: Aug 2016 |
| Authors: Sakshi Mehendiratta, Amandeep Kaur |
10.5120/ijca2016910989
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Sakshi Mehendiratta, Amandeep Kaur . Characteristics of InxGa1-XN based Light Emitting Diode with InGaN Barriers. International Journal of Computer Applications. 147, 2 (Aug 2016), 13-17. DOI=10.5120/ijca2016910989
@article{ 10.5120/ijca2016910989,
author = { Sakshi Mehendiratta,Amandeep Kaur },
title = { Characteristics of InxGa1-XN based Light Emitting Diode with InGaN Barriers },
journal = { International Journal of Computer Applications },
year = { 2016 },
volume = { 147 },
number = { 2 },
pages = { 13-17 },
doi = { 10.5120/ijca2016910989 },
publisher = { Foundation of Computer Science (FCS), NY, USA }
}
%0 Journal Article
%D 2016
%A Sakshi Mehendiratta
%A Amandeep Kaur
%T Characteristics of InxGa1-XN based Light Emitting Diode with InGaN Barriers%T
%J International Journal of Computer Applications
%V 147
%N 2
%P 13-17
%R 10.5120/ijca2016910989
%I Foundation of Computer Science (FCS), NY, USA
Abstract
The characteristics of blue InGaN multiple quantum well (MQW) Light Emitting Diodes (LEDs) with InGaN barriers are studied. The current-voltage (I-V) curve, Internal Quantum Efficiency (IQE), spontaneous rate are investigated. The simulation results show that the newly In0.15Ga0.85N /InGaN LED (Device 1) has reduced the forward voltage due to reduced energy barriers for electron and hole transport as compare to In0.2Ga0.8N/InGaN LED (Device 2). The Internal Quantum Efficiency (~98.5 %), Output Power (~1497.8 W/m) and spontaneous rate (~ 616.8 ×1026) achieved is more in case of In0.15Ga0.85N /InGaN 3-QW LED.
References
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