Research Article

32 nm Gate Length FinFET: Impact of Doping

by  Neha Somra, Ravinder Singh Sawhney
journal cover
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 122 - Issue 6
Published: July 2015
Authors: Neha Somra, Ravinder Singh Sawhney
10.5120/21703-4816
PDF

Neha Somra, Ravinder Singh Sawhney . 32 nm Gate Length FinFET: Impact of Doping. International Journal of Computer Applications. 122, 6 (July 2015), 11-14. DOI=10.5120/21703-4816

                        @article{ 10.5120/21703-4816,
                        author  = { Neha Somra,Ravinder Singh Sawhney },
                        title   = { 32 nm Gate Length FinFET: Impact of Doping },
                        journal = { International Journal of Computer Applications },
                        year    = { 2015 },
                        volume  = { 122 },
                        number  = { 6 },
                        pages   = { 11-14 },
                        doi     = { 10.5120/21703-4816 },
                        publisher = { Foundation of Computer Science (FCS), NY, USA }
                        }
                        %0 Journal Article
                        %D 2015
                        %A Neha Somra
                        %A Ravinder Singh Sawhney
                        %T 32 nm Gate Length FinFET: Impact of Doping%T 
                        %J International Journal of Computer Applications
                        %V 122
                        %N 6
                        %P 11-14
                        %R 10.5120/21703-4816
                        %I Foundation of Computer Science (FCS), NY, USA
Abstract

FinFET, a self–aligned double-gate MOSFET structure has been agreed upon to eliminate the short channel effects. In this thesis, we report the design, fabrication and physical characteristics of n-channel FinFET with physical gate length of 32nm using visual TCAD (steady state analysis). All the measurements were performed at a supply voltage of 1. 5V and Tox=5nm. We elucidate the impact of doping concentration on the Performance of n-channel 32nm gate length FinFET at 22nm width. The drain current increases gradually when donor ion concentration in source/drain regions increases to 7e20 cm-3. Adding opposite type of source/drain impurity or decreasing acceptor ion concentration in channel further improves the performance of FinFET.

References
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Index Terms
Computer Science
Information Sciences
No index terms available.
Keywords

FinFETs CMOS Drain Induced barrier lowering Silicon-on-insulator

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