Research Article
Application of VEE Pro Software for Measurement of MOS Device Parameters using C-V curve
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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
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| Volume 1 - Issue 7 |
| Published: February 2010 |
| Authors: Viranjay M. Srivastava, G.Singh, K.S.Yadav |
10.5120/164-289
|
Viranjay M. Srivastava, G.Singh, K.S.Yadav . Application of VEE Pro Software for Measurement of MOS Device Parameters using C-V curve. International Journal of Computer Applications. 1, 7 (February 2010), 43-46. DOI=10.5120/164-289
@article{ 10.5120/164-289,
author = { Viranjay M. Srivastava,G.Singh,K.S.Yadav },
title = { Application of VEE Pro Software for Measurement of MOS Device Parameters using C-V curve },
journal = { International Journal of Computer Applications },
year = { 2010 },
volume = { 1 },
number = { 7 },
pages = { 43-46 },
doi = { 10.5120/164-289 },
publisher = { Foundation of Computer Science (FCS), NY, USA }
}
%0 Journal Article
%D 2010
%A Viranjay M. Srivastava
%A G.Singh
%A K.S.Yadav
%T Application of VEE Pro Software for Measurement of MOS Device Parameters using C-V curve%T
%J International Journal of Computer Applications
%V 1
%N 7
%P 43-46
%R 10.5120/164-289
%I Foundation of Computer Science (FCS), NY, USA
Abstract
For a capacitor formed of MOS device using Metal-silicon dioxide-silicon (MOS) layers with an oxide thickness of 528 Å (measured optically), some of the material parameters were found from the curve drawn between Capacitance vs Voltage (C-V) through the Visual Engineering Environment Programming (VEE Pro) software. To perform the measurment, process by a distance, from the hazardous room, we use VEE Pro software. In this research, to find good result, vary the voltage with smaller increments and perform the measurements by vary the applying voltage from +7V to -7V and then back to +7V again and then save this result in a Data sheet with respect to temperature, volage and frequency using this program.
References
- "Agilent VEE pro user's Guide," Agilent Company.
- Thamos J. Mego, "Guidelines for Interpreting CV data," Solid State Technology, p.p. 159-163, May'1990.
- Popa, Mircea Ionel, Raul, "Virtual Instrumentation Application for System Identification," Instrumentation and Measurement Technology Conference, Proceedings of the IEEE, p.p. 842 - 846, April 2006.
- "HP VEE Reference," Hewlett Packard Company, 4th edition, January 1995.
- "MOS Application note-1," MSI electronics, Woodside, N.Y. - 1137 (Manual)
- Thamos J. Mego, "On line C-V doping profile measurement of low dose ion implant", IEEE transaction on electron devices, vol. 27, no. 12, December 1980, 2268-2273
- Viranjay M. Srivastava, "Relevance of VEE Programming for Measurement of MOS Device Parameters," IEEE International Advance Computing Conference, India, 2009, p.p. 205-209
- Viranjay M. Srivastava, "Capacitance-Voltage Measurement for Characterization of a Metal-Gate MOS Process", International Journal of Recent Trends in Engineering (IJRTE), vol. 1, no. 4, May 2009, India, 4-7. http://www.academypublisher.com/ijrte/vol01/no04/ijrte0104004007.pdf
- Nicollian, E.H. and Brews, J.R., "MOS Physics and Technology," Wiley, New York, 1982
- Sze, S.M., "Physics of Semiconductor Devices," 2nd edition, Wiley, New York, 1985
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